ka - band high power reflective spdt pin switch 26 - 40 ghz rev. v2 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 1 masw - 010646 features ? broadband performance, 26 to 40 ghz ? low loss: 0.6 db ? high isolation: 32 db ? up to 13 w cw power, +85c ? die with g - s - g rf pads and dc bias pads ? includes dc blocks and rf bias networks description and applications the masw - 010646 is a high power spdt. this broadband, reflective, high linearity, spdt switch was developed for ka C band applications that require up to 13 w of power handling while maintaining low insertion loss and high isolation. the spdt mmic utilizes macoms proven algaas pin diode technology. the switch is fully passivated with silicon nitride and has an added polymer layer for scratch protection. the protective coating prevents damage to the junction and the anode air - bridge during handling and assembly. the die has backside metallization to facilitate an epoxy die attach process. pin configuration : (back metal is rf, d.c., and thermal ground) pin function 1 rf common 2 bias 1 3 rf1 4 rf2 5 bias 2 * restrictions on hazardous substances, european union directive 2002/95/ec. die outline dimensions indicated in m. die thickness : 100 m rf pads (1, 3 & 4) are 100 x 150 m. dc bias pads (2 & 5) are 100 x 100 m. meets jedec moisture sensitivity level 1 requirements. ordering information 1 part number package masw - 010646 - 13940g die in gel pack 1. die quantity varies. functional diagram handling procedures please observe the following precautions to avoid damage: static sensitivity gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these hbm class 1a devices. r f 2 b i a s 1 b i a s 2 3 1 4 5 2 r f 1 l l c c c c c c s w 1 s w 2 r f c o m m o n
ka - band high power reflective spdt pin switch 26 - 40 ghz rev. v2 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 2 masw - 010646 parameter test conditions units min. typ. max. insertion loss 26 ghz 28 ghz 35 ghz 38 ghz 40 ghz db 0.60 0.60 0.60 0.60 0.70 0.90 0.90 0.90 isolation 2 26 ghz 28 ghz 35 ghz 38 ghz 40 ghz db 29 33 35 34 35 39 41 42 rf common return loss, on state 26 ghz 28 ghz 35 ghz 38 ghz 40 ghz db 16 18 16 16 16 rf1, rf2 return loss, on state 26 ghz 28 ghz 35 ghz 38 ghz 40 ghz db 16 18 16 16 16 switching speed - ton 50% dc to 90% rf ns 25 switching speed - toff 50% dc to 10% rf ns 23 rise time - tr 10% to 90% rf ns 9 fall time - tf 90% to 10% rf ns 9 cw input power 3 - 25 v dbm 41.2 reverse bias voltage 3 v - 32 - 15 - 5 reverse bias current 3 - 15 v na 25 electrical specifications: freq. = 28 - 38 ghz, t a = + 25 c, +25 ma, - 15 v, z 0 = 50 ? 2. isolation defined with 1 port in low loss state. 3. reverse bias voltage should be determined based on working conditions. for example, - 25 v @ 41.2 dbm input power. for lower powe r applications, a less negative voltage can be used. absolute maximum ratings 4,5 parameter absolute maximum negative dc bias voltage - 50 v dc forward bias current 40 ma cw incident power 43 dbm operating temperature - 40c to +85c storage temperature - 65c to +150c 4. exceeding any one or combination of these limits may cause permanent damage to this device. 5. macom does not recommend sustained operation near these survivability limits. rf commom path bias 1 bias 2 rf1 insertion loss rf2 isolation - 15 v 25 ma rf2 insertion loss rf1 isolation 25 ma - 15 v 6. r. caverly and g. hiller, establishing the minimum reverse bias for a pin diode in a high power switch, ieee transac- tions on microwave theory and techniques, vol.38, no.12, december 1990. truth table 6
ka - band high power reflective spdt pin switch 26 - 40 ghz rev. v2 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 3 masw - 010646 typical performance: t a = + 25 c, +25 ma, - 15 v, z 0 = 50 ? rf common return loss ((on state) insertion loss (on state) isolation (off state) rf1, 2 return loss (on state) -2.0 -1.5 -1.0 -0.5 0.0 20 24 28 32 36 40 frequency (ghz) -25 -20 -15 -10 -5 0 20 24 28 32 36 40 frequency (ghz) -25 -20 -15 -10 -5 0 20 24 28 32 36 40 frequency (ghz) -50 -40 -30 -20 -10 0 20 24 28 32 36 40 frequency (ghz)
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